STMicroelectronics STD13N50DM2AG
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STD13N50DM2AG |
|---|---|
| Datasheet | STD13N50DM2AG Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD13N50DM2AG VDS 500 V RDS(on ) max. 360 mΩ ID 11 A● AEC-Q101 qualified
● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Product status STD13N50DM2AG Product summary Order code STD13N50DM2AG Marking 13N50DM2 Package DPAK Packing Tape and reel DS12210 - Rev 4 - October 2019 For further information contact your local STMicroelectronics sales office. STD13N50DM2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC= 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt (3) MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction temperature range 1. Pulse width limited by safe operating area.
