STD13N50DM2AG Datasheet | STMicroelectronics

Features Order code STD13N50DM2AG VDS 500 V RDS(on ) max. 360 mΩ ID 11 A - AEC-Q101 qualified - Fast-recovery body diode - Extremely low gate charge and input capacitance - Low on-resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected Applications - Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status STD13N50DM2AG Product summary Order code Marking 13N50DM2 Package DPAK Packing Tape and reel DS12210 - Rev 4 - October 2019 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Gate-source voltage Drain current (continuous) at TC = 25...