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STD14NM50N - Power MOSFET

Description

This second generation of MDmesh™ technology, applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Features

  • Type STB14NM50N STD14NM50N STF14NM50N STP14NM50N.
  • VDSS @ TJmax RDS(on) max ID 1 3 3 DPAK 550 V < 0.29 Ω 12 A 1 2 TO-220 100% avalanche tested Low input capacitances and gate charge 1 3 2 3 1 Low gate input resistance TO-220FP D2PAK.

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Full PDF Text Transcription

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STB14NM50N, STD14NM50N STF14NM50N, STP14NM50N N-channel 500 V, 0.246 Ω , 12 A MDmesh™ II Power MOSFET in DPAK, D2PAK, TO-220 and TO-220FP Preliminary data Features Type STB14NM50N STD14NM50N STF14NM50N STP14NM50N ■ ■ ■ VDSS @ TJmax RDS(on) max ID 1 3 3 DPAK 550 V < 0.29 Ω 12 A 1 2 TO-220 100% avalanche tested Low input capacitances and gate charge 1 3 2 3 1 Low gate input resistance TO-220FP D2PAK Application ■ Switching applications Figure 1. Internal schematic diagram Description This second generation of MDmesh™ technology, applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche www.
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