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STD14NM50N Datasheet - ST Microelectronics

STD14NM50N Power MOSFET

This second generation of MDmesh™ technology, applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche www.DataSheet.

STD14NM50N Features

* Type STB14NM50N STD14NM50N STF14NM50N STP14NM50N

* VDSS @ TJmax RDS(on) max ID 1 3 3 DPAK 550 V < 0.29 Ω 12 A 1 2 TO-220 100% avalanche tested Low input capacitances and gate charge 1 3 2 3 1 Low gate input resistance TO-220FP D2PAK Application

* Switching applicat

STD14NM50N Datasheet (1.08 MB)

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STD14NM50N Power MOSFET ST Microelectronics

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