Datasheet Details
| Part number | STD20N06 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 174.94 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet |
 STD20N06 Datasheet
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| Part number | STD20N06 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 174.94 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet |
STD20N06 Datasheet
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This series of POWER MOSFETS represents the latest development in low voltage technology.
The ultra high cell density process (UHD) produced with fine geometries on advanced equipment gives the device extremely low RDS(on) as well as good switching performance and high avalanche energy capability.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s POWER MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCRONOUS RECTIFICATION s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS ID ID ID M( •) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max.
STD20N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STD20N06 s s s s s s s s V DSS 60 V R DS( on) < 0.03 Ω ID 20 A (*) s TYPICAL RDS(on) = 0.
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