Full PDF Text Transcription for STD20P3H6AG (Reference)
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STD20P3H6AG Automotive-grade P-channel -30 V, 33 mΩ typ., -20 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagr...
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package Datasheet - production data Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STD20P3H6AG VDS -30 V RDS(on) max. 50 mΩ ID -20 A Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
STD20P3H6AG Datasheet
