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STD28P3LLH6AG - P-channel Power MOSFET

Datasheet Summary

Description

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

  • Order code VDS STD28P3LLH6AG -30V RDS(on) max. 0.030Ω ID PTOT -12A 33W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM11258v1.
  • Designed for automotive.

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Datasheet Details

Part number STD28P3LLH6AG
Manufacturer STMicroelectronics
File Size 572.49 KB
Description P-channel Power MOSFET
Datasheet download datasheet STD28P3LLH6AG Datasheet
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Full PDF Text Transcription

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STD28P3LLH6AG Automotive-grade P-channel -30 V, 0.027 Ω typ., -12 A STripFET™ H6 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS STD28P3LLH6AG -30V RDS(on) max. 0.030Ω ID PTOT -12A 33W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM11258v1  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss  Logic level Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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