STD30N10F7 Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STD30N10F7 AM01475v1_noZen Table 1: Device summary Marking Package 30N10F7 DPAK Packing Tape and reel May 2017 DocID025607 Rev 4 This is information on a product in...
STD30N10F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
