STD30N10F7 - N-Channel MOSFET

Product Overview

INCHANGE

Part number	STD30N10F7
Manufacturer	INCHANGE
File Size	275.50 KB
Description	N-Channel MOSFET
Datasheet	STD30N10F7 Datasheet
Additional preview pages of the STD30N10F7 datasheet.

Low Drain-Source On-Resistance APPLICATIONS

Max.

Drain Current.
ID= 32A@ TC=25℃.
Drain Source Voltage- : VDSS= 100V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.024Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

STD30N10F7 - N-CHANNEL POWER MOSFET (STMicroelectronics)
STD30N10 - N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STD30N15 - N-Channel MOSFET (SamHop Microelectronics)
STD30N01 - N-Channel MOSFET (SamHop Microelectronics)
STD30N6LF6AG - N-CHANNEL POWER MOSFET (STMicroelectronics)
STD30NE06 - N-CHANNEL POWER MOSFET (ST Microelectronics)
STD30NE06L - N-CHANNEL POWER MOSFET (ST Microelectronics)
STD30NF03L - N-CHANNEL POWER MOSFET (ST Microelectronics)

Other Datasheets by INCHANGE

Published: Dec 5, 2020 |