Datasheet Summary
N-channel 100 V, 0.02 Ω typ., 32 A, STripFET™ F7 Power MOSFET in a DPAK package
- production data
Figure 1: Internal schematic diagram D(2, TAB)
G(1) S(3)
Features
Order code STD30N10F7
VDS 100 V
RDS(on) max. 0.024 Ω
ID 32 A
PTOT 50 W
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient...
