STMicroelectronics STD30N10F7
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.| Part No. | STD30N10F7 |
|---|---|
| Datasheet | STD30N10F7 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD30N10F7 VDS 100 V RDS(on) max. 0.024 Ω ID 32 A PTOT 50 W● Among the lowest RDS(on) on the market
● Excellent FoM (figure of merit)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness
APPLICATIONS
● Switching applicationsDESCRIPTION
Order code STD30N10F7 AM01475v1_noZen Table 1: Device summary Marking Package 30N10F7 DPAK Packing Tape and reel May 2017 DocID025607 Rev 4 This is information on a product in full production. 1/15 Contents Contents STD30N10F7 1 Electrical ratings ..........
