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STD3N62K3 Datasheet

N-channel Power MOSFET

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STD3N62K3, STF3N62K3, STU3N62K3
Datasheet
N-channel 620 V, 2.2 Ω typ., 2.7 A MDmesh™ K3 Power MOSFETs in
DPAK, TO-220FP and IPAK packages
D(2, TAB)
G(1)
S(3)
AM01475V1
Product status link
STD3N62K3
STF3N62K3
STU3N62K3
Features
Order code
VDS
RDS(on)max.
STD3N62K3
STF3N62K3
620 V
2.5 Ω
STU3N62K3
• 100% avalanche tested
• Extremely high dv/dt capability
• Very low intrinsic capacitance
• Improved diode reverse recovery characteristics
• Zener-protected
ID
2.7 A
2.7 A
2.7 A
Package
DPAK
TO-220FP
IPAK
Applications
• Switching applications
Description
These MDmesh™ K3 Power MOSFETs are the result of improvements applied to
STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical
structure. These devices boast an extremely low on-resistance, superior dynamic
performance and high avalanche capability, rendering them suitable for the most
demanding applications.
DS5888 - Rev 3 - July 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STD3N62K3 Datasheet

N-channel Power MOSFET

No Preview Available !

STD3N62K3, STF3N62K3, STU3N62K3
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
DPAK
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
2.7
ID Drain current (continuous) at TC = 100 °C
1.7
IDM (2)
Drain current (pulsed)
10.8
PTOT
Total dissipation at TC = 25 °C
45
ESD
Gate-source human body model
(C = 100 pF, R = 1.5 kΩ)
dv/dt (3) Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t = 1 s; TC = 25 °C)
Tj Operating junction temperature range
Tstg Storage temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 2.7 A, di/dt ≤ 200 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Value
TO-220FP
620
±30
2.7 (1)
1.7 (1)
10.8 (1)
20
2.5
9
2500
-55 to 150
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-ambient
Rthj-pcb(1) Thermal resistance junction-pcb
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
DPAK
2.78
50
Value
TO-220FP
6.25
62.5
Table 3. Avalanche characteristics
Symbol
Parameter
IAR(1)
Avalanche current, repetitive or not-repetitive
EAS(2)
Single pulse avalanche energy
1. Pulse width limited by Tj max.
2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V.
Value
2.7
100
IPAK
2.7
1.7
10.8
45
IPAK
2.78
100
Unit
V
V
A
A
A
W
kV
V/ns
V
°C
Unit
°C/W
°C/W
°C/W
Unit
A
mJ
DS5888 - Rev 3
page 2/27


Part Number STD3N62K3
Description N-channel Power MOSFET
Maker STMicroelectronics
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STD3N62K3 Datasheet PDF






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