STD3N65M6 Datasheet | STMicroelectronics

Features Order code STD3N65M6 VDS 650 V RDS(on) max. 1.5 Ω - Reduced switching losses - Lower RDS(on) per area vs previous generation - Low gate input resistance - 100% avalanche tested - Zener-protected ID 3.5 A Applications - Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which bines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. DS11612 - Rev...