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STD3NK90ZT4 Datasheet

N-Channel MOSFET

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STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
Datasheet
N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH™ Power MOSFETs
in DPAK, TO-220 and TO-220FP packages
TAB
23
1
DPAK
TAB
TO-220
1 23
3
2
1
TO-220FP
D(2, TAB)
G(1)
S(3)
AM01475V1
Product status link
STD3NK90ZT4
STP3NK90Z
STP3NK90ZFP
Features
Order code
VDS
RDS(on) max.
ID
STD3NK90ZT4
STP3NK90Z
900 V
4.8 Ω
3A
STP3NK90ZFP
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
Package
DPAK
TO-220
TO-220FP
Applications
• Switching applications
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs
developed using the SuperMESH™ technology by STMicroelectronics, an
optimization of the well-established PowerMESH™. In addition to a significant
reduction in on-resistance, these devices are designed to ensure a high level of dv/dt
capability for the most demanding applications.
DS2980 - Rev 3 - August 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STD3NK90ZT4 Datasheet

N-Channel MOSFET

No Preview Available !

STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
DPAK, TO-220
TO-220FP
VDS
Drain-source voltage
900
VGS
Gate-source voltage
± 30
ID
Drain current (continuous) at TC = 25 °C
3
3 (1)
ID
Drain current (continuous) at TC = 100 °C
1.89
1.89 (1)
IDM (2)
Drain current (pulsed)
12
12 (1)
PTOT
Total dissipation at TC = 25 °C
90
25
ESD
Gate-source human body model
(R = 1,5 kΩ, C = 100 pF)
4
dv/dt (3) Peak diode recovery voltage slope
4.5
Insulation withstand voltage (RMS) from all three
VISO
leads to external heat sink (t = 1 s; Tc = 25 °C)
2.5
Tj
Operating junction temperature range
Tstg
Storage temperature range
-55 to 150
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 3 A, di/dt ≤ 200 A/μs, VDS(peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Unit
V
V
A
A
A
W
kV
V/ns
kV
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-ambient
Rthj-pcb (1) Thermal resistance junction-pcb
1. When mounted on 1inch² FR-4, 2 Oz copper board.
Value
DPAK
TO-220
TO-220FP
1.38
5
62.5
50
Unit
°C/W
Table 3. Avalanche characteristics
Symbol
Parameter
IAR (1)
Avalanche current, repetitive or not-repetitive
EAS (2)
Single pulse avalanche energy
1. Pulse width limited by Tjmax.
2. Starting Tj = 25°C, ID = IAR, VDD = 50 V.
Value
Unit
3
A
180
mJ
DS2980 - Rev 3
page 2/24



Part Number STD3NK90ZT4
Description N-Channel MOSFET
Maker STMicroelectronics
Total Page 3 Pages
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STD3NK90ZT4 Datasheet PDF





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