Datasheet Summary
N-channel 30V
- 0.0090Ω
- 40A
- DPAK Low gate charge STripFET™ II Power MOSFET
General Features
..
Type
VDSS 30V
RDS(on) <0.011Ω
ID 40A
- -
- -
- Logic level device Optimal RDS(on) x Qg trade-off Conduction losses reduced Switching losses reduced Low threshold drive
DPAK
3 1
Description
This application specific Power MOSFET is the third generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is...