STD4NK80Z Key Features
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatibility
- Part: STD4NK80Z
- Manufacturer: STMicroelectronics (official site)
- Size: 522.36 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STD4NK80Z-1 | N-channel Power MOSFET |
STD4NK80Z Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series plements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.