Full PDF Text Transcription for STD4NK80Z-1 (Reference)
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STD4NK80Z-1 Datasheet N-channel 800 V, 2.7 Ω typ., 3 A SuperMESH Power MOSFET in an IPAK package Features TAB Order code VDS RDS(on) max. ID STD4NK80Z-1 800 V 3.5 Ω 3A 3 ...
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tures TAB Order code VDS RDS(on) max. ID STD4NK80Z-1 800 V 3.5 Ω 3A 3 2 1 • 100% avalanche tested • Gate charge minimized IPAK • Very low intrinsic capacitance • Zener-protected D(2, TAB) Applications • Switching applications G(1) Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) using the SuperMESH technology by STMicroelectronics, an optimization of the well- AM01476v1_tab established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
STD4NK80Z-1 Datasheet
