STD4NK80Z-1 Datasheet | STMicroelectronics

N-channel 800 V, 2.7 Ω typ., 3 A Super MESH Power MOSFET in an IPAK package Features Order code RDS(on) max. 800 V 3.5 Ω 3A 2 1 - 100% avalanche tested - Gate charge minimized IPAK - Very low intrinsic capacitance - Zener-protected D(2, TAB) Applications - Switching applications G(1) Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) using the Super MESH technology by STMicroelectronics, an optimization of the well- AM01476v1_tab established Power MESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD4NK80Z-1 Product summary Order code Marking D4NK80Z Package IPAK Packing Tube...