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STD5NK50Z-1 - N-CHANNEL Power MOSFET

Download the STD5NK50Z-1 datasheet PDF. This datasheet also covers the STD5NK50Z variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • TYPE VDSS RDS(on) ID Pw STB5NK50Z STB5NK50Z-1 STD5NK50Z STD5NK50Z-1 STP5K50Z STP5K50ZFP 500 V 500 V 500 V 500 V 500 V 500 V < 1.5 Ω < 1.5 Ω < 1.5 Ω < 1.5 Ω < 1.5 Ω < 1.5 Ω 4.4 A 4.4 A 4.4 A 4.4 A 4.4 A 4.4 A 70 W 70 W 70 W 70 W 70 W 25 W s.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STD5NK50Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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STB5NK50Z/-1 - STD5NK50Z/-1 STP5NK50Z - STP5NK50ZFP N-CHANNEL 500V - 1.22Ω - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH™MOSFET Table 1: General Features TYPE VDSS RDS(on) ID Pw STB5NK50Z STB5NK50Z-1 STD5NK50Z STD5NK50Z-1 STP5K50Z STP5K50ZFP 500 V 500 V 500 V 500 V 500 V 500 V < 1.5 Ω < 1.5 Ω < 1.5 Ω < 1.5 Ω < 1.5 Ω < 1.5 Ω 4.4 A 4.4 A 4.4 A 4.4 A 4.4 A 4.4 A 70 W 70 W 70 W 70 W 70 W 25 W s TYPICAL RDS(on) = 1.22 Ω s EXTREMELY HIGH dv/dt CAPABILITY s IMPROVED ESD CAPABILITY s 100% AVALANCHE RATED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
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