STD78N75F4
Features
Type STD78N75F4 STP78N75F4
VDSS 75 V 75 V
RDS(on) max < 0.011 Ω < 0.011 Ω
ID 70 A 78 A
- N-channel enhancement mode
- 100% avalanched rated
- Low gate charge
- Very low on-resistance
Application
- Switching applications
Description
This STrip FET™ Deep GATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances.
3 1
DPAK
3 2 1
TO-220
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary Order codes STD78N75F4 STP78N75F4
Marking 78N75F4 78N75F4
Package DPAK TO-220
Packaging Tape and reel
Tube
November 2009
Doc ID 15682 Rev 2
1/14
.st.
Contents
Contents
STD78N75F4, STP78N75F4
Electrical ratings
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