STD7NM80-1 Datasheet - STMicroelectronics

N-channel Power MOSFET

STD7NM80-1 Features

* TAB Order code VDS RDS(on) max. ID 3 ) 2 t(s 1 c IPAK STD7NM80-1 800 V

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance 1.05 Ω 6.5 A Produ D(2, TAB) Applications

* Switching applications solete G(1) t(s) - Ob S(

STD7NM80-1 General Description

AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche charac.

STD7NM80-1 Datasheet (468.96 KB)