STD95NH02L datasheet, mosfet equivalent, ST Microelectronics

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Features and benefits

Type VDSS RDS(on) ID STD95NH02L )STD95NH02L-1 24V 24V < 0.005Ω < 0.005Ω t(s1. Value limited by wire bonding uc
* Conduction losses reduced d
* Switching lo.

Application

roduApplication Obsolete P
* Switching applications 3 2 1 IPAK 3 1 DPAK Figure 1. Internal schematic diagram Ta.

Description

oleThe device is based on the latest generation of sST’s proprietary STripFET™ technology. An binnovative layout enables the device to also Oexhibit extremely low gate charge for the most -demanding requirements in high-frequency DCt(s)DC converters..

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