STD9N65DM6AG Datasheet | STMicroelectronics

Features Order code STD9N65DM6AG RDS(on) max. 650 V 440 mΩ 9A - AEC-Q101 qualified - Fast-recovery body diode - Lower RDS(on) per area vs previous generation - Low gate charge, input capacitance and resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected Applications - Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STD9N65DM6AG Product summary(1) Order code Marking 9N65DM6 Package DPAK Packing Tape and reel 1. The HTRB test was performed at 80% V(BR)DSS in pliance with AEC-Q101 rev. C. All the other tests were performed according to rev. D. DS13320 - Rev 1 - April 2020 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter...