Datasheet Summary
N-CHANNEL 200V
- 0.022Ω
- 110A ISOTOP MESH OVERLAY™ Power MOSFET
TYPE STE110NS20FD n n n n n n n
VDSS 200V
RDS(on) < 0.024Ω
ID 110 A
TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING LOW INTRINSIC CAPACITANCE FAST BODY-DRAIN DIODE:LOW trr, Qrr
ISOTOP
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patented STrip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(ON) per area, exceptional avalanche and dv/dt capabilities...