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STE30NK90Z - N-CHANNEL MOSFET

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • TYPE STE30NK90Z s s s s STE30NK90Z Figure 1: Package ID 28 A Pw 500 W VDSS 900 V RDS(on) < 0.26 Ω.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com N-CHANNEL 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESH™ MOSFET Table 1: General Features TYPE STE30NK90Z s s s s STE30NK90Z Figure 1: Package ID 28 A Pw 500 W VDSS 900 V RDS(on) < 0.26 Ω TYPICAL RDS(on) = 0.21 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.