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STMicroelectronics Electronic Components Datasheet

STE48NM50 Datasheet

N-CHANNEL Power MOSFET

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STE48NM50
N-CHANNEL 550V @ Tjmax - 0.08- 48A ISOTOP
MDmesh™ MOSFET
Table 1: General Features
TYPE
VDSS
(@Tjmax)
RDS(on)
ID
STE48NM50
550V
< 0.1
48 A
s TYPICAL RDS(on) = 0.08
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizon-
tal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip tech-
nique yields overall dynamic performance that is
significantly better than that of similar competi-
tion’s products.
Figure 1: Package
ISOTOP
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmesh™ family is very suitable for increas-
ing power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
Table 2: Order Codes
SALES TYPE
STE48NM50
MARKING
E48NM50
PACKAGE
ISOTOP
PACKAGING
TUBE
March 2005
www.DataSheet4U.com
Rev. 2
1/9


STMicroelectronics Electronic Components Datasheet

STE48NM50 Datasheet

N-CHANNEL Power MOSFET

No Preview Available !

STE48NM50
Table 3: Absolute Maximum ratings
Symbol
Parameter
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( )
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (*) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (AC-RMS)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
( )Pulse width limited by safe operating area
(*) ISD 48A, di/dt 400 A/µs, VDD V(BR)DSS, Tj TJMAX.
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case
Rthc-sink (**) Thermal Resistance Case-sink
(**) with conductive GREASE Applies
Max
Typ
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
±30
48
30
192
450
3.6
15
2500
–65 to 150
150
Unit
V
A
A
A
W
W/°C
V/ns
V
°C
°C
0.28
0.05
Max Value
15
810
°C/W
°C/W
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS= Max Rating, TC= 125°C
10
100
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA
345
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 24A
0.08 0.1
Unit
V
µA
µA
nA
V
2/9


Part Number STE48NM50
Description N-CHANNEL Power MOSFET
Maker ST Microelectronics
Total Page 9 Pages
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