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STE48NM50 - N-CHANNEL Power MOSFET

Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

Features

  • TYPE STE48NM50 s s s s Figure 1: Package RDS(on) < 0.1Ω ID 48 A VDSS (@Tjmax) 550V s s.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STE48NM50 N-CHANNEL 550V @ Tjmax - 0.08Ω - 48A ISOTOP MDmesh™ MOSFET Table 1: General Features TYPE STE48NM50 s s s s Figure 1: Package RDS(on) < 0.1Ω ID 48 A VDSS (@Tjmax) 550V s s TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS ISOTOP DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.
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