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STMicroelectronics Electronic Components Datasheet

STE48NM60 Datasheet

N-channel 600V 0.09 Ohm 48A ISOtop Mdmesh Power MOSFET

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STE48NM60
N-CHANNEL 600V - 0.09- 48A ISOTOP
MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STE48NM60
600V
< 0.11
48 A
TYPICAL RDS(on) = 0.09
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
June 2003
www.DataSheet4U.com
Value
Unit
600 V
600 V
±30 V
48 A
30 A
192 A
450 W
3.57 W/°C
15 V/ns
–65 to 150
°C
150 °C
(1) ISD 48A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX.
1/8


STMicroelectronics Electronic Components Datasheet

STE48NM60 Datasheet

N-channel 600V 0.09 Ohm 48A ISOtop Mdmesh Power MOSFET

No Preview Available !

STE48NM60
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient
Max
Tl Maximum Lead Temperature For Soldering Purpose
0.28
30
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
Max Value
15
850
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
10
100
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 22.5A
Min.
3
Typ.
4
0.09
Max.
5
0.11
Unit
V
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 22.5A
15 S
Ciss Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
3800
pF
Coss
Output Capacitance
1250
pF
Crss Reverse Transfer
Capacitance
46 pF
Coss eq. (2) Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 480V
340 pF
RG Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.4
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS
2/8


Part Number STE48NM60
Description N-channel 600V 0.09 Ohm 48A ISOtop Mdmesh Power MOSFET
Maker ST Microelectronics
Total Page 8 Pages
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