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STMicroelectronics Electronic Components Datasheet

STE70NM60 Datasheet

N-channel Power MOSFET

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STE70NM60
N-CHANNEL 600V - 0.050- 70A ISOTOP
Zener-Protected MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STE70NM60
600V < 0.05570 A
TYPICAL RDS(on) = 0.050
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL
INDUSTRY’S LOWEST ON-RESISTANCE
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DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE
MARKING
STE70NM60
E70NM60
PACKAGE
ISOTOP
PACKAGING
TUBE
March 2003
1/8


STMicroelectronics Electronic Components Datasheet

STE70NM60 Datasheet

N-channel Power MOSFET

No Preview Available !

STE70NM60
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1) ISD 70A, di/dt 400 A/µs, VDD V(BR)DSS, Tj TJMAX.
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient
Max
Tl Maximum Lead Temperature For Soldering Purpose
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AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
Value
600
600
±30
70
44
280
600
6
4.5
15
–65 to 150
150
0.2
30
300
Max Value
30
1.4
Unit
V
V
V
A
A
A
W
KV
W/°C
V/ns
°C
°C
°C/W
°C/W
°C
Unit
A
J
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/8


Part Number STE70NM60
Description N-channel Power MOSFET
Maker ST Microelectronics
Total Page 8 Pages
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