STF13NM60N
Features
Order code
RDS(on) max.
600 V
360 mΩ
11 A
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Product status link STF13NM60N
Product summary
Order code
Marking
13NM60N
Package
TO-220FP
Packing
Tube
DS14454
- Rev 1
- September 2023 For further information contact your local STMicroelectronics sales office.
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Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25...
