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STF13NM60ND - N-channel Power MOSFET

Datasheet Summary

Description

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology.

Features

  • Order code VDS at TJ max. RDS(on) max. ID STF13NM60ND 650 V 380 mΩ 11 A.
  • Fast-recovery body diode.
  • Low gate charge and input capacitance.
  • Low on-resistance RDS(on).
  • 100% avalanche tested.
  • High dv/dt ruggedness.

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Datasheet preview – STF13NM60ND

Datasheet Details

Part number STF13NM60ND
Manufacturer STMicroelectronics
File Size 449.18 KB
Description N-channel Power MOSFET
Datasheet download datasheet STF13NM60ND Datasheet
Additional preview pages of the STF13NM60ND datasheet.

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Full PDF Text Transcription

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STF13NM60ND Datasheet N-channel 600 V, 325 mΩ typ., 11 A FDmesh II Power MOSFET in a TO-220FP package 3 2 1 TO-220FP D(2) G(1) S(3) AM01475v1_noZen_noTab Features Order code VDS at TJ max. RDS(on) max. ID STF13NM60ND 650 V 380 mΩ 11 A • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness Applications • Switching applications Description This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
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