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STMicroelectronics Electronic Components Datasheet

STF5N52U Datasheet

N-Channel MOSFET

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STF5N52U
Datasheet
N-channel 525 V, 1.25 Ω typ., 4.4 A, UltraFASTmesh™
Power MOSFET in a TO-220FP package
Features
Order code
VDS
RDS(on) max.
ID
PTOT
ct(s) 2 3
1
du TO-220FP
ro D(2)
STF5N52U
525 V
• Outstanding dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitances
• Very low RDS(on)
• Extremely low trr
1.50 Ω
4.4 A
25 W
te P Applications
le • Switching applications
o G(1)
bs Description
- O This device is N-channel Power MOSFET developed using UltraFASTmesh™
) technology, which combines the advantages of reduced on resistance, Zener gate
t(s S(3)
AM15572v1_no_tab protection and very high dv/dt capability with an enhanced fast body-drain recovery
diode.
Obsolete Produc Product status link
STF5N52U
Product summary
Order code
STF5N52U
Marking
5N52U
Package
TO-220FP
Packing
Tube
DS12943 - Rev 1 - March 2019
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STF5N52U Datasheet

N-Channel MOSFET

No Preview Available !

STF5N52U
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
VGS
Gate- source voltage
±30
ID
Drain current (continuous) at TC = 25 °C
4.4
ID
) IDM (1)
t(s PTOT
uc dv/dt (2)
Drain current (continuous) at TC= 100 °C
Drain current (pulsed)
Total power dissipation at TC = 25 °C
Peak diode recovery voltage slope
rod VISO
P Tstg
te Tj
le ESD
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t=1 s; TC=25 °C)
Storage temperature range
Operating junction temperature range
Gate-source human body model (R = 1.5 kΩ, C = 100 pF)
so 1. Pulse width limited by safe operating area.
b 2. ISD ≤ 4.4 A, di/dt ≤ 400 A/µs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS
t(s) - O Symbol
uc Rthj-case
rod Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
2.8
17.6
25
20
2.5
-55 to 150
2.8
Value
5
62.5
olete P Symbol
Obs IAR
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or non-repetitive (pulse width limited by Tjmax)
Value
4.4
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
170
Unit
V
A
A
W
V/ns
kV
°C
kV
Unit
°C/W
Unit
A
mJ
DS12943 - Rev 1
page 2/13


Part Number STF5N52U
Description N-Channel MOSFET
Maker ST Microelectronics
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STF5N52U Datasheet PDF






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