STF7N60M2 Datasheet, STMicroelectronics

3 2 1 TO-220FP Figure 1. Internal schematic diagram , TAB Order code STF7N60M2 VDS @ TJmax 650 V RDS(on) max 0.95 Ω ID 5A
* Extremely low gate charge
* Lowe.

* Switching applications Description This device is an N-channel Power MOSFET developed using a new generation of M.

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest .