STFI31N65M5
Features
2 3
D2PAK
3 2 1
TO-220FP
12 3
I2Pak FP
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
Order codes VDSS @ TJmax RDS(on) max ID
STB31N65M5
STF31N65M5 STFI31N65M5
710 V
< 0.148 Ω 22 A
STP31N65M5
STW31N65M5
- Worldwide best RDS(on)
- area
- Higher VDSS rating and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
'Ć7$%
Applications
- Switching applications
- 6
$0Y
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is bined with STMicroelectronics’ well-known Power MESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Order code STB31N65M5 STF31N65M5 STFI31N65M5 STP31N65M5 STW31N65M5
Table 1. Device...
