STB31N65M5, STF31N65M5, STFI31N65M5,
STP31N65M5, STW31N65M5
N-channel 650 V, 0.124 Ω typ., 22 A MDmesh™ V Power MOSFET
22
in D PAK, TO-220FP, I PakFP, TO-220 and TO-247 packages
Datasheet − production data
Features
TAB
2
3
1
D2PAK
TAB
3
2
1
TO-220FP
12 3
I2PakFP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
Order codes VDSS @ TJmax RDS(on) max ID
STB31N65M5
STF31N65M5
STFI31N65M5
710 V
< 0.148 Ω 22 A
STP31N65M5
STW31N65M5
• Worldwide best RDS(on) * area
• Higher VDSS rating and high dv/dt capability
• Excellent switching performance
• 100% avalanche tested
' Ć7$%
Applications
• Switching applications
*
6
$0Y
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order code
STB31N65M5
STF31N65M5
STFI31N65M5
STP31N65M5
STW31N65M5
Table 1. Device summary
Marking
Package
2
D PAK
31N65M5
TO-220FP
2
I PakFP
TO-220
TO-247
Packaging
Tape and reel
Tube
March 2013
This is information on a product in full production.
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