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STFU11N65M2 - N-Channel Power MOSFET

General Description

technology.

Key Features

  • Order code VDS RDS(on) max. ID STFU11N65M2 650 V 0.68 Ω 7A 3 12 TO-220FP ultra narrow leads D(2).
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

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STFU11N65M2 Datasheet N-channel 650 V, 0.60 Ω typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Features Order code VDS RDS(on) max. ID STFU11N65M2 650 V 0.68 Ω 7A 3 12 TO-220FP ultra narrow leads D(2) • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it S(3) AM15572v1_no_tab suitable for the most demanding high efficiency converters.