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STFU14N80K5 - N-Channel Power MOSFET

General Description

technology based on an innovative proprietary vertical structure.

Key Features

  • 3 12 TO-220FP ultra narrow leads D(2) Order code VDS STFU14N80K5 800 V.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected RDS(on ) max. 0.445 Ω ID 12 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STFU14N80K5 Datasheet N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFET in a TO-220FP ultra narrow leads package Features 3 12 TO-220FP ultra narrow leads D(2) Order code VDS STFU14N80K5 800 V • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected RDS(on ) max. 0.445 Ω ID 12 A Applications • Switching applications G(1) Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a S(3) AM15572v1_no_tab dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.