Datasheet4U Logo Datasheet4U.com

STFU260N4F7 - N-channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • roduct(s)3 P2 1 leteTO-220FP oultra narrow leads Obsolete Product(s) - ObsFigure 1: Internal schematic diagram Order code STFU260N4F7 VDS 40 V RDS(on) max. 2.5 mΩ ID 35 W.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STFU15NM65N N-Channel MOSFET INCHANGE
STF Three PhaseNeutral Filters PREMO CORPORATION
STF-xxxHV Three-Phase + Neutral Line Filters Premo
STF0402 COMMON MODE CHOKE Superworld Electronics
STF0402100YZF COMMON MODE CHOKE Superworld Electronics

Other Datasheets by STMicroelectronics

Part Number Description
STFU24N60M2 N-CHANNEL POWER MOSFET
STFU28N65M2 N-CHANNEL POWER MOSFET
STFU10N80K5 N-channel Power MOSFET
STFU10NK60Z N-channel MOSFET
STFU11N65M2 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STFU260N4F7 N-channel 40 V, 1.95 mΩ typ., 90 A, STripFET™ F7 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - preliminary data Features roduct(s)3 P2 1 leteTO-220FP oultra narrow leads Obsolete Product(s) - ObsFigure 1: Internal schematic diagram Order code STFU260N4F7 VDS 40 V RDS(on) max. 2.5 mΩ ID 35 W  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.