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STG35M120F3D7 - IGBT

STMicroelectronics

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Datasheet Details

Part number	STG35M120F3D7
Manufacturer	STMicroelectronics ↗
File Size	179.70 KB
Description	IGBT
Datasheet	STG35M120F3D7-STMicroelectronics.pdf

STG35M120F3D7 Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

10 μs of short-circuit withstand time.
Low VCE(sat) = 1.85 V (typ. ) @ IC = 35 A.
Positive VCE(sat) temperature coefficient.
Tight parameter distribution.
Maximum junction temperature: TJ = 175 °C.

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Published: May 6, 2020 |