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STG35M120F3D7 - IGBT

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.

Key Features

  • 10 μs of short-circuit withstand time.
  • Low VCE(sat) = 1.85 V (typ. ) @ IC = 35 A.
  • Positive VCE(sat) temperature coefficient.
  • Tight parameter distribution.
  • Maximum junction temperature: TJ = 175 °C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STG35M120F3D7 Datasheet 1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing C G Features • 10 μs of short-circuit withstand time • Low VCE(sat) = 1.85 V (typ.) @ IC = 35 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Maximum junction temperature: TJ = 175 °C Applications • Motor control E • Industrial drives EGCD • PFC • UPS • Solar • General purpose inverter Product status STG35M120F3D7 Product summary Order code STG35M120F3D7 VCE 1200 V ICN 35 A Die size 6.44 x 5.74 mm² Packing D7 Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.