STG50M120F3D7
STG50M120F3D7 is IGBT manufactured by STMicroelectronics.
Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing
Features
- Maximum junction temperature: TJ = 175 °C
- 10 μs of short-circuit withstand time
- Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A
- Tight parameter distribution
- Positive VCE(sat) temperature coefficient
Applications
- Industrial motor control
EGCD
- Industrial drives
- Solar inverters
- Uninterruptable power supplies (UPS)
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the...
