STG50M170F3D7
STG50M170F3D7 is IGBT manufactured by STMicroelectronics.
Trench gate field-stop 1700 V, 50 A low loss M series IGBT die in D7 packing
Features
- Low VCE(sat) = 2 V (typ.) @ IC = 50 A
- 10 μs of short-circuit withstand time
- Minimized tail current
- Tight parameter distribution
- Positive VCE(sat) temperature coefficient
Applications
- Industrial motor control
EGCD
- Industrial drives
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the...
