Datasheet Details
| Part number | STG50M120F3D7 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 238.73 KB |
| Description | IGBT |
| Download | STG50M120F3D7 Download (PDF) |
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| Part number | STG50M120F3D7 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 238.73 KB |
| Description | IGBT |
| Download | STG50M120F3D7 Download (PDF) |
|
|
|
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
STG50M120F3D7 Datasheet Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing C.
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