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STG50M170F3D7 - IGBT

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STMicroelectronics

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STG50M170F3D7 IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STG50M170F3D7

Datasheet Details

Part number	STG50M170F3D7
Manufacturer	STMicroelectronics
File Size	243.46 KB
Description	IGBT
Datasheet	STG50M170F3D7 Datasheet
Additional preview pages of the STG50M170F3D7 datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

Low VCE(sat) = 2 V (typ. ) @ IC = 50 A.
10 μs of short-circuit withstand time.
Minimized tail current.
Tight parameter distribution.
Positive VCE(sat) temperature coefficient.

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Published: Jun 26, 2023 |