Datasheet Summary
Galvanically isolated 4 A single gate driver for SiC MOSFETs
Product status link STGAP2SICS
Product label
Features
- High voltage rail up to 1200 V
- Driver current capability: 4 A sink/source @25°C
- dV/dt transient immunity ±100 V/ns in full temperature range
- Overall input-output propagation delay: 75 ns
- Separate sink and source option for easy gate driving configuration
- 4 A Miller CLAMP dedicated pin option
- UVLO function
- Gate driving voltage up to 26 V
- 3.3 V, 5 V TTL/CMOS inputs with hysteresis
- Temperature shut-down protection
- Standby function
- 6 kV galvanic isolation
- Wide body SO-8W package
- UL 1577 recognized
Description
The STGAP2SICS is a...