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STGAP2SICSN Datasheet Galvanically Isolated 4a Single Gate Driver

Manufacturer: STMicroelectronics

Overview: STGAP2SICSN Datasheet Galvanically isolated 4 A single gate driver for SiC MOSFETs Product status link STGAP2SICSN Product.

General Description

The STGAP2SICSN is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.

The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications.

The device is available in two different configurations.

Key Features

  • High voltage rail up to 1700 V.
  • Driver current capability: 4 A sink/source @25 °C.
  • dV/dt transient immunity ±100 V/ns in full temperature range.
  • Overall input-output propagation delay: 75 ns.
  • Separate sink and source option for easy gate driving configuration.
  • 4 A Miller CLAMP dedicated pin option.
  • UVLO function.
  • Gate driving voltage up to 26 V.
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis.
  • Temperature shutd.

STGAP2SICSN Distributor & Price

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