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STGB18N40LZ Datasheet Eas 180 Mj - 400 V - Internally Clamped IGBT

Manufacturer: STMicroelectronics

Overview: STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped.

General Description

This application-specific IGBT utilizes the most advanced PowerMESH™ technology.

The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.

The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system.

Key Features

  • AEC Q101 compliant.
  • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH.
  • ESD gate-emitter protection.
  • Gate-collector high voltage clamping.
  • Logic level gate drive.
  • Low saturation voltage.
  • High pulsed current capability.
  • Gate and gate-emitter resistor.

STGB18N40LZ Distributor