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STGB18N40LZ Datasheet, STMicroelectronics

STGB18N40LZ igbt equivalent, eas 180 mj - 400 v - internally clamped igbt.

STGB18N40LZ Avg. rating / M : 1.0 rating-12

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STGB18N40LZ Datasheet

Features and benefits


* AEC Q101 compliant
* 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
* ESD gate-emitter protection
* Gate-collector high voltage clamping
* Logic.

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STGB18N40LZ Page 1 STGB18N40LZ Page 2 STGB18N40LZ Page 3

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