Download STGB18N40LZ Datasheet PDF
STGB18N40LZ datasheet preview
STGB18N40LZ page 2
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STGB18N40LZ page 3
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STGB18N40LZ Key Features

  • AEC Q101 pliant
  • 180 mJ of avalanche energy @ TC = 150 °C
  • ESD gate-emitter protection
  • Gate-collector high voltage clamping
  • Logic level gate drive
  • Low saturation voltage
  • High pulsed current capability
  • Gate and gate-emitter resistor
  • Pencil coil electronic ignition driver
  • 3 2 Electrical characteristics

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STGB18N40LZ Description

This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system.