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STGB10NB40LZT4
Automotive-grade 10 A, 410 V internally clamped IGBT
Datasheet - production data
TAB
2 3
1
D²PAK
Figure 1: Internal schematic diagram C (2,TAB)
G (1)
RGE
Features
Order code STGB10NB40LZT4
VCES Clamped
VCE(sat)max. 1.8 V
IC 20 A
AEC-Q101 qualified Low threshold voltage Low on-voltage drop Low gate charge High current capability High voltage clamping feature
Applications
Switching applications
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, PowerMESH™ with an overall outstanding performance. The built-in collector-gate Zener exhibits a very precise active clamping while the gate-emitter Zener supplies the ESD protection.