Datasheet Summary
N-CHANNEL CLAMPED 20A
- D²PAK INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE STGB10NB40LZ s s s s s s
VCES CLAMPED
VCE(sat) < 1.8 V
IC 20 A
POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE
3 1
D2PAK
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s AUTOMOTIVE...
