STGB30V60F Datasheet - STMicroelectronics

Trench gate field-stop IGBT

STGB30V60F Features

* Maximum junction temperature: TJ = 175 °C

* Tail-less switching off

* VCE(sat) = 1.85 V (typ.) @ IC = 30 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance Applications

* Photovoltaic inverters

* Uninterrupt

STGB30V60F General Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a pos.

STGB30V60F Datasheet (1.41 MB)

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Datasheet Details

Part number:

STGB30V60F

Manufacturer:

STMicroelectronics ↗

File Size:

1.41 MB

Description:

Trench gate field-stop igbt.
STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB 3 1 D2PAK TAB 3 2 1 TO-220 .

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STGB30V60F Trench gate field-stop IGBT STMicroelectronics

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STGB30V60F Features

STGB30V60F General Description

Datasheet Details

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