STGB30V60DF Key Features
- Maximum junction temperature: TJ = 175 °C
- Tail-less switching off
- VCE(sat) = 1.85 V (typ.) @ IC = 30 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Part: STGB30V60DF
- Manufacturer: STMicroelectronics (official site)
- Size: 1.09 MB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STGB30V60F | Trench gate field-stop IGBT |
| STGB30H60DF | 30A high speed trench gate field-stop IGBT |
| STGB30H60DFB | 600V 30A IGBT |
| STGB30H60DLLFBAG | Automotive-grade trench gate field-stop IGBT |
| STGB30H65DFB2 | high-speed HB2 series IGBT |
STGB30V60DF Description
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum promise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.