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STGB30V60F - Trench gate field-stop IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure.

The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 30 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.

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Datasheet preview – STGB30V60F

Datasheet Details

Part number STGB30V60F
Manufacturer STMicroelectronics
File Size 1.41 MB
Description Trench gate field-stop IGBT
Datasheet download datasheet STGB30V60F Datasheet
Additional preview pages of the STGB30V60F datasheet.

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Full PDF Text Transcription

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STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB 3 1 D2PAK TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram C (2, TAB) Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters G (1) E (3) Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure.
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