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STGB50H65FB2 - IGBT

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STMicroelectronics

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STGB50H65FB2 IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGB50H65FB2

Datasheet Details

Part number	STGB50H65FB2
Manufacturer	STMicroelectronics
File Size	651.63 KB
Description	IGBT
Datasheet	STGB50H65FB2 Datasheet
Additional preview pages of the STGB50H65FB2 datasheet.

Product details

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

Features

Maximum junction temperature: TJ = 175 °C.
Low VCE(sat) = 1.55 V(typ. ) @ IC = 50 A.
Minimized tail current.
Tight parameter distribution.
Low thermal resistance.
Positive VCE(sat) temperature coefficient C(2, TAB) G(1).

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Published: Apr 26, 2020 |