Datasheet Summary
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N-channel 600V
- 7A
- DPAK Very fast PowerMESH™ IGBT
General Features
Type STGD6NC60H
- -
- VCES 600V
VCE(sat)Max @25°C <2.5V
IC @100°C 7A
3 1
Low on voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptibility) High frequency operation
DPAK
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) manta in ing a low voltage drop.
Internal schematic...
