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STGD6NC60HDT4 - IGBT

Datasheet Summary

Description

This device is a very fast IGBT developed using advanced PowerMESH™ technology.

This process guarantees an excellent trade-off between switching performance and low on-state behavior.

This device is well-suited for resonant or soft-switching applications.

Features

  • Order codes VCES VCE(sat) max. IC (at TC = 100 °C) STGD6NC60HDT4 600 V 2.5 V 7A.
  • Low on-voltage drop (VCE(sat)).
  • Low CRES / CIES ratio (no cross-conduction susceptibility).
  • Very soft ultra fast recovery antiparallel diode.
  • High frequency operation NG1E3C2T.

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STGD6NC60HDT4 Datasheet N-channel 600 V, 7 A very fast IGBT TAB 23 1 DPAK C(2, TAB) G(1) E(3) Features Order codes VCES VCE(sat) max. IC (at TC = 100 °C) STGD6NC60HDT4 600 V 2.5 V 7A • Low on-voltage drop (VCE(sat)) • Low CRES / CIES ratio (no cross-conduction susceptibility) • Very soft ultra fast recovery antiparallel diode • High frequency operation NG1E3C2T Applications • High-frequency inverters • SMPS and PFC in both hard switch and resonant topologies • Motor drivers Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications.
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