STGD6NC60HDT4 Description
This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications.
STGD6NC60HDT4 Key Features
- Low on-voltage drop (VCE(sat))
- Low CRES / CIES ratio (no cross-conduction susceptibility)
- Very soft ultra fast recovery antiparallel diode
- High frequency operation