STGD6M65DF2
STGD6M65DF2 is IGBT manufactured by STMicroelectronics.
Trench gate field-stop, 650 V, 6 A, low-loss M series IGBT in a DPAK package
TAB 23 1
DPAK C(2, TAB)
G(1)
E(3)
NG1E3C2T
Product status link STGD6M65DF2
Features
- Maximum junction temperature: TJ = 175 °C
- 6 μs of minimum short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 6 A
- Tight parameter distribution
- Safer paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft and very fast-recovery antiparallel diode
Applications
- Industrial motor control
- PFC converters, single phase input
- Uninterruptable power supplies (UPS)
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Product summary
Order code
Marking
G6M65DF2
Package
DPAK
Packing
Tape and...
