Datasheet Details
| Part number | STGD6M65DF2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 885.14 KB |
| Description | IGBT |
| Datasheet | STGD6M65DF2-STMicroelectronics.pdf |
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Overview: STGD6M65DF2 Datasheet Trench gate field-stop, 650 V, 6 A, low-loss M series IGBT in a DPAK package TAB 23 1 DPAK C(2, TAB) G(1) E(3) NG1E3C2T Product status link.
| Part number | STGD6M65DF2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 885.14 KB |
| Description | IGBT |
| Datasheet | STGD6M65DF2-STMicroelectronics.pdf |
|
|
|
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
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