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STGD6M65DF2 - IGBT

Datasheet Summary

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • 6 μs of minimum short-circuit withstand time.
  • VCE(sat) = 1.55 V (typ. ) @ IC = 6 A.
  • Tight parameter distribution.
  • Safer paralleling.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.
  • Soft and very fast-recovery antiparallel diode.

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STGD6M65DF2 Datasheet Trench gate field-stop, 650 V, 6 A, low-loss M series IGBT in a DPAK package TAB 23 1 DPAK C(2, TAB) G(1) E(3) NG1E3C2T Product status link STGD6M65DF2 Features • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 6 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft and very fast-recovery antiparallel diode Applications • Industrial motor control • PFC converters, single phase input • Uninterruptable power supplies (UPS) Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
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