STMicroelectronics STGD6M65DF2
This device is an IGBT developed using an advanced proprietary trench gate field‑stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the lowloss and the short-circuit functionality is essential.| Part No. | STGD6M65DF2 |
|---|---|
| Datasheet | STGD6M65DF2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 6A low-loss IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● 6 μs of minimum short-circuit withstand time
● VCE(sat) = 1.55 V (typ.) at IC = 6 A
● Tight parameter distribution
● Safer paralleling
● Positive VCE(sat) temperature coefficient
● Low thermal resistance
● Soft and very fast-recovery antiparallel diode
APPLICATIONS
● Industrial motor control● PFC converters, single phase input
● Uninterruptable power supplies (UPS)
DESCRIPTION
Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product summary Order code STGD6M65DF2 Marking G6M65DF2 Package DPAK Packing Tape and reel DS11406 - Rev 6 - May 2025 For further information, contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulsed collector curre...
