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STGD10HF60KD - short-circuit rugged IGBT

General Description

This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode.

Key Features

  • Designed for automotive.

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STGD10HF60KD Automotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode Datasheet - production data TAB 3 1 DPAK Features • Designed for automotive applications and AEC-Q101 qualified • Low on-voltage drop (VCE(sat)) • Low Cres / Cies ratio (no cross conduction susceptibility) • Switching losses include diode recovery energy • Short-circuit rated • Very soft Ultrafast recovery anti-parallel diode Figure 1. Internal schematic diagram Applications • High frequency inverters • SMPS and PFC in both hard switch and resonant topologies • Motor drives • Injection systems Description This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode.